整合型低電壓，低功率紅外線輻射溫度感測模組

Abstract

本論文研究提供了一個整合型低供應電壓、低功率消耗、低雜訊紅外線輻射溫度感測模組晶片。此模組晶片包含紅外線輻射溫度感測器、前端類比放大器、參考電壓選擇式類比數位轉換器。紅外線輻射溫度感測器的架構是使用熱電堆，在紅外線輻射溫度感測器的輸出訊號強度最大只有約5~10μV並且分佈在低頻帶(10~100Hz)，由於感測器的輸出訊號是屬於微弱訊號和低頻訊號，因此需要低雜訊和低偏移電壓的前端放大器，所以使用截波穩定放大器來放大感測器的輸出訊號。在放大器的後端再使用8位元的參考電壓選擇式類比數位轉換器以達到數位的輸出。本晶片中的電路利用TSMC 0.18μm COMS Mixed-Signal RF General purpose MiM Al 1P6M 1.8&3.3V進行電路的設計、模擬並交於國家晶片中心製作，並於晶片製做完成後針對其特性量測。經量測後，截波放大器在載波頻率為1.67KHz的時候輸入雜訊為2 、偏移電壓為5mV、增益值為22dB。類比數位轉換器在輸入訊號為100Hz的正弦波時，有效位元數為5.98bits。溫度感測器經過放大80dB之後每改變10℃輸出電壓為100mV。本晶片的供應電壓為1V、總功率消耗為1.31μW。

A low voltage and low power thermal infrared ray temperature sensing device is developed in this study. The device consists of infrared ray temperature sensor, analog front-end amplifier circuit and alternative reference voltage ADC. The infrared ray temperature sensor is obtained by using thermopile structure. The maximum output voltage of the infrared ray temperature sensor is from 5 to 10uV and distributed in the low-frequency band (10~100Hz). With low frequency and low output voltage of the sensor, a low noise and low offset voltage front-end amplifier circuit called chopper amplifier is used to amplify the signal of sensor. Upon the completion of the amplifier, an 8-bits alternative reference voltage ADC is used to convert analog input to digital output. The circuit of chip was simulated by using TSMC 0.18μm COMS Mixed-Signal RF General purpose MiM Al 1P6M 1.8 & 3.3V process. The measurement results have shown that the chopper amplifier has achieved 2 input noise 、5mV offset voltage and 22dB gain at 1.67KHz chopping. The ADC has an 5.98 effective number of bits (ENOB) at 100Hz input sine wave. The sensor signal is 100mV output per 10℃ changed after amplifying at 80dB. The supply voltage and total power consumption of the fabricated device are 1V and 1.31mW respectively.