陽極處理氧化鋁薄膜基板對液晶配向之研究

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DC Field	Value	Language
dc.contributor.author	郭政穎	en_US
dc.contributor.author	Cheng-Ying Kuo	en_US
dc.contributor.author	趙如蘋	en_US
dc.date.accessioned	2014-12-12T03:06:29Z	-
dc.date.available	2014-12-12T03:06:29Z	-
dc.date.issued	2006	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT009421529	en_US
dc.identifier.uri	http://hdl.handle.net/11536/81256	-
dc.description.abstract	本研究藉由使用陽極處理氧化鋁薄膜作為配向層，利用控制陽極處理電壓可產生直徑10-65nm的奈米孔洞，使得液晶分子產生垂直配向；極角錨定強度最強可達8×10-5 J/m2，因此可作為非常好的垂直配向膜。製作週期性氧化鋁溝槽部分，本研究初步可得到水平配向與垂直配向的結果，液晶5CB在小週期性(2μm-4μm)氧化鋁溝槽(300nm)上具有水平配向的結果。在大週期性(10μm-80μm)氧化鋁溝槽上，深(600nm)的溝槽具有水平配向的效果；而在淺溝槽(300nm)的基板上則得到垂直配向的結果。	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	陽極氧化鋁	zh_TW
dc.subject	液晶配向	zh_TW
dc.subject	Anodic Porous Alumina	en_US
dc.subject	Liquid Crystal Alignment	en_US
dc.title	陽極處理氧化鋁薄膜基板對液晶配向之研究	zh_TW
dc.title	Study on Liquid Crystal Alignment by Anodic Porous Alumina	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子物理系所	zh_TW
Appears in Collections:	Thesis

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