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标题: 利用时间解析量测技术研究氮砷化铟镓量子井的超快载子动力行为
Ultrafast Carrier Dynamics of InGaAsxN1-x Single Quantum Wells by Time-Resolved Photoreflectance Measurement
作者: 陈颖书
Ying-Shu Chen
谢文峰
Wen-Feng Hsieh
光电工程学系
关键字: 氮砷化铟镓单层量子井;载子动力学;激发-探测;松弛时间;超快;InGaAsN single quantum well;carrier dynamics;pump probe;relaxation time;ultrafast
公开日期: 2006
摘要: 在本论文中，我们比较由金属有机化学气相沈积法(MOCVD)成长的砷化铟镓和氮砷化铟镓单层量子井的超快载子动力学。氮砷化铟镓的能隙因为氮的加入比砷化铟镓的能隙小很多，可以发出波长为1.45μm 的光。我们利用飞秒时析反射量测研究载子的松弛过程。比较这两个样品在不同波长的量测结果，发现短波长下由于能隙收缩，反射率变化为负；长波长下由于能带填充，反射率变化则为正。另外(氮)砷化铟镓有两个生命期，我们推测较短者为电子电洞散射所致，较长者在砷化铟镓和氮砷化铟镓中，分别为热声子效应和受激辐射。
The comparative analysis of the ultrafast carrier dynamics of metal-organic chemical vapor deposition (MOCVD) grown In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQW) is reported. The incorporation of a low content N in InGaAsN reduces the band-gap energy significantly and allows emission wavelengths shift to 1.45 μm. Carrier dynamics were investigated by femtosecond time-resolved photoreflectance measurement at 800/820 and 880 nm with various pump intensities. Comparison with these two samples at different pumping wavelengths indicates that ΔR is negative at pumping wavelength < 820nm due to bandgap renormalization; ΔR is positive at 880nm due to band filling effect. Furthermore, there are two lifetimes in InGaAs(N), and we speculate that the shorter one is due to electron-hole scattering. The longer one is due to hot phonon decay in InGaAs and stimulated emission in InGaAsN.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009424515
http://hdl.handle.net/11536/81333
显示于类别：Thesis


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