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dc.contributor.authorLiao, Y. Y.en_US
dc.contributor.authorChuu, D. S.en_US
dc.contributor.authorJian, S. R.en_US
dc.date.accessioned2014-12-08T15:10:38Z-
dc.date.available2014-12-08T15:10:38Z-
dc.date.issued2008-11-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3009960en_US
dc.identifier.urihttp://hdl.handle.net/11536/8145-
dc.description.abstractThis study investigates phonon-induced electron relaxation in a lateral double quantum dot that is embedded in a suspended slab. Exact calculations are made in electric fields. The dependence of the relaxation rate on the parameters of the dots and the slabs is analyzed. Numerical results indicate that the relaxation rate depends strongly on the phonon character of the slab. Unlike in the bulk environment, phonon-subband quantization clearly influences the behavior. In particular, the relaxation rate can be greatly suppressed or enhanced by tuning the electric fields. This fact may be useful in manipulating the relaxation rate in lateral double quantum dots.en_US
dc.language.isoen_USen_US
dc.subjectelectric fieldsen_US
dc.subjectgallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectphononsen_US
dc.subjectrelaxationen_US
dc.subjectsemiconductor quantum dotsen_US
dc.titleElectric-field-controlled electron relaxation in lateral double quantum dots embedded in a suspended slaben_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3009960en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume104en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000262605800136-
dc.citation.woscount2-
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