高電流密度高分子熱載子電晶體

Abstract

近年來，以有機共軛高分子當作半導體材料的研究已經相普及，其製作的電晶體元件以MOS結構的場效薄膜電晶體為主，但是共軛高分子半導體的載子遷移率仍低於無機半導體，所以載子的通道必須更小才能得到一樣的電流密度，也就是需要更昂貴的黃光微影設備。所以我們利用了共軛高分子的一些特性，製作出垂直式的電晶體，不需要任何微影設備就可以做出短通道的電晶體，不僅如此，它還可以有很大的有效面積。 而最近研究的成果有了一些突破，我們的垂直式電晶體的電流增益可以高達40，而在10伏特的操作電壓下，電流密度可以高達560 mA/cm^2，這樣的結果已經可以輕鬆的驅動有機發光二極體，大大地增加元件的應用。而由於我們的電晶體還有一些運作機制尚未明瞭 ，希望這樣的實驗結果能引起更多人的注意和參予。

Recently，the research of conjugated polymer as semiconductor material is very popular .However the main research of transistor is still put emphasis on MOSFET. But the mobility of organic semiconductor is lower than inorganic semiconductor, so we need more narrow channel to get the same output characteristics with inorganic FET , or we need more expansive apparatus. So we take advantage of conjugated polymer to fabricate vertical transistor, which never need expansive apparatus. Besides, this transistor has big operating area. Recently, we have already published quiet good results of vertical structure. The current gain is up to 40 ,and the current density is up to 500mA/cm^2 at 10V. This SMS transistor can drive PLED easily in that condition. There are still lots of unknown facts about hot carrier transistor，we hope that this good result can attract more and more people to join this research.