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dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorChiang, Tsung-Yuen_US
dc.contributor.authorWu, Woei-Cherngen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:10:43Z-
dc.date.available2014-12-08T15:10:43Z-
dc.date.issued2008-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2008.2004781en_US
dc.identifier.urihttp://hdl.handle.net/11536/8194-
dc.description.abstractLow-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high-kappa gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility mu(FE) improvements of similar to 86.0% and 112.5% are observed for LTPS-TFTs with HfO2 gate dielectric after N-2 and NH3 plasma surface treatments, respectively. In addition, the N2 and NH3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility mu(FE) at high gate bias voltage V-G, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V-TH similar to 0.33 V, excellent subthreshold swing S.S. similar to 0.156 V/decade, and high field-effect mobility mu(FE) similar to 62.02 cm(2) /V . s would be suitable for the application of system-on-panel.en_US
dc.language.isoen_USen_US
dc.subjectHigh-kappaen_US
dc.subjectlow-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)en_US
dc.subjectNH3 plasmaen_US
dc.subjectN-2 plasmaen_US
dc.titleImpacts of N-2 and NH3 Plasma Surface Treatments on High-Performance LTPS-TFT With High-kappa Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2008.2004781en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue11en_US
dc.citation.spage1236en_US
dc.citation.epage1238en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000260866500018-
dc.citation.woscount3-
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