利用磁控濺鍍法製作氧化銦鋅薄膜之研究

Abstract

本論文利用物理氣相沉積的原理，藉由磁控直流濺鍍法將銦鋅氧化物（Indium Zinc Oxide，簡稱IZO）的靶材材料經由離子轟擊後沉膜在玻璃基板上；研究IZO薄膜的電阻率、載子移動率、載子濃度、薄膜表面粗慥度、薄膜的光穿透率、薄膜的晶體結構、薄膜的表面形態、薄膜的功函數等性質及熱處理、沉積溫度、氧氣氛量等製程參數變化的影響；並與傳統使用之銦錫氧化物（Indium Tin Oxide，簡稱ITO）透明導電薄膜特性做比較，研究結果顯示IZO薄膜具有：低電阻率、高可見光穿透度、良好表面平坦度、高化學穩定性質等特性。高功函數的IZO透明導電薄膜材料，除了具備較佳的光電特性之外，還有製程簡單及較少的製程缺陷等優點，可以運用在量產的製程技術，以取代ITO在LCD、OLED顯示器上當作透明導電材料的應用。

In this thesis, according to the theory of physical vapor deposition, we used DC power magnetron sputtering to bombard the target of Indium Zinc Oxide and deposited the transparent solid thin film on glass substrate. We will study and research the characteristics of bulk resistivity, Hall mobility, bulk concentration, surface roughness, transmittance, film structure, film morphology, work function and the influence of annealing, deposition temperature and O2 flow of IZO thin film deposited with different parameters. In traditional, most often used the Indium Tin Oxide to be a TCO （Transparent Conducting Oxide）material applied at display technology. Compared the photoelectric characteristics of IZO thin film with ITO, the conclusions would tell us about the low resistance, high transmittance, good surface roughness, highly chemical stability and fast etching rate and well work function of IZO thin film material. Besides the better photoelectric characteristics, IZO thin film also have much more advantages than ITO, such as simpler fabricated process and less process defects. Those conclusions strength our confidence to apply the new TCO material into the mass production technology, and tell us that the IZO has a large chance to replace the ITO to be a new generation material of TCO at LCD and OLED displays technology area.