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dc.contributor.authorChiang, Tsung-Yuen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorWu, Yi-Hongen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.date.accessioned2014-12-08T15:10:51Z-
dc.date.available2014-12-08T15:10:51Z-
dc.date.issued2008-10-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2008.2002944en_US
dc.identifier.urihttp://hdl.handle.net/11536/8305-
dc.description.abstractIn this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (> 5.5 V), lower operation voltage, high P/E speed, and longer retention time (> 10(8) s for 13% charge loss).en_US
dc.language.isoen_USen_US
dc.subjectmemory windowen_US
dc.subjectnonvolatile memoryen_US
dc.subjectretention timeen_US
dc.subjectsilicon nanocrystals (Si-NC)en_US
dc.titleHigh-program/erase-speed SONOS with in situ silicon nanocrystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2008.2002944en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue10en_US
dc.citation.spage1148en_US
dc.citation.epage1151en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000259812900020-
dc.citation.woscount15-
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