标题: | High-program/erase-speed SONOS with in situ silicon nanocrystals |
作者: | Chiang, Tsung-Yu Chao, Tien-Sheng Wu, Yi-Hong Yang, Wen-Luh 电子物理学系 Department of Electrophysics |
关键字: | memory window;nonvolatile memory;retention time;silicon nanocrystals (Si-NC) |
公开日期: | 1-十月-2008 |
摘要: | In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (> 5.5 V), lower operation voltage, high P/E speed, and longer retention time (> 10(8) s for 13% charge loss). |
URI: | http://dx.doi.org/10.1109/LED.2008.2002944 http://hdl.handle.net/11536/8305 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2002944 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 29 |
Issue: | 10 |
起始页: | 1148 |
结束页: | 1151 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.