Title: | High-program/erase-speed SONOS with in situ silicon nanocrystals |
Authors: | Chiang, Tsung-Yu Chao, Tien-Sheng Wu, Yi-Hong Yang, Wen-Luh 電子物理學系 Department of Electrophysics |
Keywords: | memory window;nonvolatile memory;retention time;silicon nanocrystals (Si-NC) |
Issue Date: | 1-Oct-2008 |
Abstract: | In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (> 5.5 V), lower operation voltage, high P/E speed, and longer retention time (> 10(8) s for 13% charge loss). |
URI: | http://dx.doi.org/10.1109/LED.2008.2002944 http://hdl.handle.net/11536/8305 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2002944 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 29 |
Issue: | 10 |
Begin Page: | 1148 |
End Page: | 1151 |
Appears in Collections: | Articles |
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