完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yao, C. Y. | en_US |
dc.contributor.author | Chen, G. J. | en_US |
dc.contributor.author | Tseng, T. Y. | en_US |
dc.date.accessioned | 2014-12-08T15:10:56Z | - |
dc.date.available | 2014-12-08T15:10:56Z | - |
dc.date.issued | 2008-09-01 | en_US |
dc.identifier.issn | 1533-4880 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1166/jnn.2008.473 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8373 | - |
dc.description.abstract | Single crystalline ZnO nanowires were synthesized by hydrothermal process and then formed nanotubes by acidic etching these nanowires in acetic solution at 85 degrees C. The nanotube diameter can be easily controlled by dividing the nanowires growth and etching process. The ZnO nanotubes remain single crystalline hexagonal structure after the etching process. The defects existed in the nanowires and the dangling bonds of the nanowires' surface play the important roles for the etching process. An etching model for forming ZnO nanotubes is proposed, which can be proved by our experimental results. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ZnO Nanotubes | en_US |
dc.subject | ZnO Nanowires | en_US |
dc.subject | Etching | en_US |
dc.title | Preparation and Characterizations of ZnO Nanotubes by Acidic Etching Nanowires | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1166/jnn.2008.473 | en_US |
dc.identifier.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 4432 | en_US |
dc.citation.epage | 4435 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000260776900018 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |