完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYao, C. Y.en_US
dc.contributor.authorChen, G. J.en_US
dc.contributor.authorTseng, T. Y.en_US
dc.date.accessioned2014-12-08T15:10:56Z-
dc.date.available2014-12-08T15:10:56Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2008.473en_US
dc.identifier.urihttp://hdl.handle.net/11536/8373-
dc.description.abstractSingle crystalline ZnO nanowires were synthesized by hydrothermal process and then formed nanotubes by acidic etching these nanowires in acetic solution at 85 degrees C. The nanotube diameter can be easily controlled by dividing the nanowires growth and etching process. The ZnO nanotubes remain single crystalline hexagonal structure after the etching process. The defects existed in the nanowires and the dangling bonds of the nanowires' surface play the important roles for the etching process. An etching model for forming ZnO nanotubes is proposed, which can be proved by our experimental results.en_US
dc.language.isoen_USen_US
dc.subjectZnO Nanotubesen_US
dc.subjectZnO Nanowiresen_US
dc.subjectEtchingen_US
dc.titlePreparation and Characterizations of ZnO Nanotubes by Acidic Etching Nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2008.473en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume8en_US
dc.citation.issue9en_US
dc.citation.spage4432en_US
dc.citation.epage4435en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000260776900018-
dc.citation.woscount5-
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