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dc.contributor.authorChang, KMen_US
dc.contributor.authorLi, CHen_US
dc.contributor.authorFahn, FJen_US
dc.contributor.authorTsai, JYen_US
dc.contributor.authorYeh, THen_US
dc.contributor.authorWang, SWen_US
dc.contributor.authorYang, JYen_US
dc.date.accessioned2014-12-08T15:02:10Z-
dc.date.available2014-12-08T15:02:10Z-
dc.date.issued1997-01-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/856-
dc.description.abstractThe influence of the precleaning process on the characteristics of SiO2 film grown by using electron cyclotron resonance (ECR) plasma oxidation at room temperature is presented in this work. We find that the growth rate, electrical properties, and reliability of the ECR plasma grown oxide is improved by this precleaning step. Two growth mechanisms are found which determine the electrical properties of the plasma grown oxide. The plasma damage is also discussed. We find that plasma oxidation produces little plasma damage in our experiments. Excellent ECR plasma grown silicon dioxide with good electrical properties and reliability characteristics are obtained by this precleaning technique.en_US
dc.language.isoen_USen_US
dc.titleThe influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidationen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume144en_US
dc.citation.issue1en_US
dc.citation.spage311en_US
dc.citation.epage314en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WG07000050-
dc.citation.woscount1-
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