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dc.contributor.authorHu, Chih-Hueien_US
dc.contributor.authorChang, Lon-Kouen_US
dc.date.accessioned2014-12-08T15:11:17Z-
dc.date.available2014-12-08T15:11:17Z-
dc.date.issued2008-07-01en_US
dc.identifier.issn0885-8993en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TPEL.2008.926950en_US
dc.identifier.urihttp://hdl.handle.net/11536/8655-
dc.description.abstractA complete equivalent model and analysis of high-efficiency charge-pump gain-increase (PGI) circuits with resistive loads are proposed. Based on this simple analytical model, the characteristics of PGI circuits can be approximately predicted and several handy equations, which are useful for pencil-and-paper design, can also be found for planning the desired circuit to achieve good enough performance with an acceptable accuracy tolerance in the steady state. In addition, an optimized design method for PGI circuits with resistive loads is developed in terms of the total number of gain stages in the design and the ratio between pump capacitors. For 1.5 V supply voltage operation, reliability and accuracy are demonstrated by comparisons between SPICE simulations of the PGI circuit and the results from the equivalent model. The model also has been validated by means of measurements taken from a test chip and typically shows relative open-loop output voltage errors lower than 8%. Finally, although the derivation of the model was based on a PGI circuit, it is shown that the design strategy can also be applied to other charge pump designs that have no voltage drop between the inner stages and the output stage.en_US
dc.language.isoen_USen_US
dc.subjectcharge pumpen_US
dc.subjectdc-dc converteren_US
dc.subjectequivalent modelen_US
dc.subjecthigh-voltage generatoren_US
dc.subjectvoltage multiplieren_US
dc.titleAnalysis and modeling of on-chip charge pump designs based on pumping gain increase circuits with a resistive loaden_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TPEL.2008.926950en_US
dc.identifier.journalIEEE TRANSACTIONS ON POWER ELECTRONICSen_US
dc.citation.volume23en_US
dc.citation.issue4en_US
dc.citation.spage2187en_US
dc.citation.epage2194en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000258118000060-
dc.citation.woscount9-
Appears in Collections:Articles


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