標題: Complementary inverter circuits based on p-SnO(2) and n-In(2)O(3) thin film transistors
作者: Dhananjay
Chu, Chih-Wei
Ou, Chun-Wei
Wu, Meng-Chyi
Ho, Zhong-Yo
Ho, Kuo-Chuan
Lee, Shih-Wei
光電工程學系
Department of Photonics
公開日期: 9-Jun-2008
摘要: Thin film transistors (TFTs) of indium oxide (In(2)O(3)) and tin oxide (SnO(2)) were fabricated on SiO(2) gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In(2)O(3) films were polycrystalline in nature with preferred (222) orientation and SnO(2) films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO(2) films were oxygen rich and presume mixed oxidation states of Sn, namely Sn(2+) and Sn(4+). While the In(2)O(3) based TFTs possess n-type channel conduction, SnO(2) based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2936275
http://hdl.handle.net/11536/8722
ISSN: 0003-6951
DOI: 10.1063/1.2936275
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 23
起始頁: 
結束頁: 
Appears in Collections:Articles