High-performance solution-processed polymer space-charge-limited transistor

Abstract

We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 10(4). The current density is higher than 1 mA/cm(2). (C) 2007 Elsevier B.V. All rights reserved.