High-performance solution-processed polymer space-charge-limited transistor

doi:10.1016/j.orgel.2007.11.012

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chao, Yu-Chiang	en_US
dc.contributor.author	Meng, Hsin-Fei	en_US
dc.contributor.author	Horng, Sheng-Fu	en_US
dc.contributor.author	Hsu, Chain-Shu	en_US
dc.date.accessioned	2014-12-08T15:11:23Z	-
dc.date.available	2014-12-08T15:11:23Z	-
dc.date.issued	2008-06-01	en_US
dc.identifier.issn	1566-1199	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.orgel.2007.11.012	en_US
dc.identifier.uri	http://hdl.handle.net/11536/8740	-
dc.description.abstract	We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 10(4). The current density is higher than 1 mA/cm(2). (C) 2007 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	space-charge-limited current	en_US
dc.subject	vertical transistor	en_US
dc.title	High-performance solution-processed polymer space-charge-limited transistor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.orgel.2007.11.012	en_US
dc.identifier.journal	ORGANIC ELECTRONICS	en_US
dc.citation.volume	9	en_US
dc.citation.issue	3	en_US
dc.citation.spage	310	en_US
dc.citation.epage	316	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000255801100006	-
dc.citation.woscount	20	-
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