標題: Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectric
作者: Hung, B. F.
Wu, C. H.
Chin, Albert
Wang, S. J.
Lin, J. W.
Hsieh, I. J.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ytterbium;LaAlO3;UPS;threshold voltage;EOT
公開日期: 2007
摘要: We have demonstrated high-performance metal-gate/high-k Ytterbiuni/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-k LaAlO3 dielectric. The high breakdown voltage is also due to the high-k LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.
URI: http://hdl.handle.net/11536/8745
ISBN: 978-7-5617-5228-9
期刊: AD'07: Proceedings of Asia Display 2007, Vols 1 and 2
起始頁: 1190
結束頁: 1193
Appears in Collections:Conferences Paper