標題: Enhanced performance and reliability for solid phase crystallized poly-Si TFTs with argon ion implantation
作者: Chang, Chia-Wen
Chang, Che-Lun
Luo, Wun-Chen
Lee, Jam-Wem
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: surface-nucleation;interface-nucleation;solid-phase epitaxy regrowth;thin-film transistors (TFTs)
公開日期: 2007
摘要: Performance and reliability improvement for polycrystalline silicon thin-film transistors (poly-Si TFrs) with Argon ion implantation are proposed for the first time. By adopting this novel surface -nucleation solid -phase-cry stallization scheme, not only the grain size of poly-Si can be increased but also the intragranular defects can be suppressed effectively. Therefore, a high quality of poly-Si film in channel with better crystallinity is formed. Argon-implanted TFrs have been successfully fabricated and the experimental results demonstrate a superior field-effect mobility of 46. 06 cm(2)/VS, a fewer grain boundary trap density of 3.44 x 10(12) cm(-2) than those of conventional TFrs. The novel proposed structure is a very promising candidate for the future high-performance large-area device applications.
URI: http://hdl.handle.net/11536/8756
ISBN: 978-7-5617-5228-9
期刊: AD'07: Proceedings of Asia Display 2007, Vols 1 and 2
起始頁: 1223
結束頁: 1228
Appears in Collections:Conferences Paper