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dc.contributor.authorLai, Ming-Huien_US
dc.contributor.authorWu, Yewchung Sermonen_US
dc.contributor.authorChang, Chih-Pangen_US
dc.date.accessioned2014-12-08T15:11:29Z-
dc.date.available2014-12-08T15:11:29Z-
dc.date.issued2011-06-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-011-1522-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/8808-
dc.description.abstractNi-metal-induced crystallization (MIC) of amorphous Si (alpha-Si) has been employed to fabricate low-temperature polycrystalline silicon thin-film transistors (TFTs). However, the Ni residues degrade the device performance. In this study, a new method for manufacturing MIC-TFTs using drive-in Ni-induced crystallization with a chemical oxide layer (DICC) is proposed. Compared with that of MIC-TFTs, the on/off current ratio (I (on)/I (off)) of DICC-TFTs was increased by a factor of 9.7 from 9.21 x 10(4) to 8.94 x 10(5). The leakage current (I (off)) of DICC-TFTs was 4.06 pA/mu m, which was much lower than that of the MIC-TFTs (19.20 pA/mu m). DICC-TFTs also possess high immunity against hot-carrier stress and thereby exhibit good reliability.en_US
dc.language.isoen_USen_US
dc.subjectDrive-in nickel-induced crystallizationen_US
dc.subjectchemical oxideen_US
dc.subjectfluorine ion implantationen_US
dc.subjectmetal-induced crystallizationen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleImproved Electrical Performance and Reliability of Poly-Si TFTs Fabricated by Drive-In Nickel-Induced Crystallization with Chemical Oxide Layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-011-1522-3en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume40en_US
dc.citation.issue6en_US
dc.citation.spage1470en_US
dc.citation.epage1475en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000290201500019-
dc.citation.woscount0-
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