新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(III)

Full metadata record

DC Field	Value	Language
dc.contributor.author	雷添福	en_US
dc.contributor.author	LEI TAN-FU	en_US
dc.date.accessioned	2014-12-13T10:28:26Z	-
dc.date.available	2014-12-13T10:28:26Z	-
dc.date.issued	2007	en_US
dc.identifier.govdoc	NSC96-2221-E009-188	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/88331	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1471177&docId=264082	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(III)	zh_TW
dc.title	New Structure and Technology of Low-Temperature Poly-Si TFT for EEPROM Device Application(III)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans