| 標題: | 新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(III) New Structure and Technology of Low-Temperature Poly-Si TFT for EEPROM Device Application(III) |
| 作者: | 雷添福 LEI TAN-FU 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2007 |
| 官方說明文件#: | NSC96-2221-E009-188 |
| URI: | http://hdl.handle.net/11536/88331 https://www.grb.gov.tw/search/planDetail?id=1471177&docId=264082 |
| Appears in Collections: | Research Plans |
- 新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(II) / 雷添福;LEI TAN-FU
- 新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(I) / 雷添福;LEI TAN-FU
- Characterization of the novel polysilicon TFT with a subgate coupling structure / Chang, KM;Chung, YH;Deng, CG;Chung, YF;Lin, JH
- Enhanced planar poly-Si TFT EEPROM cell for system on panel applications / Liu, Po-Tsun;Huang, C. S.;Chen, C. W.
- Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition / Kuo, Po-Yi;Chao, Tien-Sheng;Huang, Jyun-Siang;Lei, Tan-Fu
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