標題: | 單電荷與輻射效應在先進CMOS 和SONOS 元件可靠性之統計量測與模式 Statistical Models and Characterization of Single Charge Phenomena and Irradiation Effects in Advanced CMOS and SONOS Devices |
作者: | 汪大暉 WANG TAHUI 國立交通大學電子工程學系及電子研究所 |
公開日期: | 2013 |
官方說明文件#: | NSC102-2221-E009-173-MY3 |
URI: | http://hdl.handle.net/11536/88422 https://www.grb.gov.tw/search/planDetail?id=3086423&docId=415027 |
Appears in Collections: | Research Plans |