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dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorChiu, S. H.en_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorYao, D. J.en_US
dc.date.accessioned2014-12-08T15:11:33Z-
dc.date.available2014-12-08T15:11:33Z-
dc.date.issued2011-05-16en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matchemphys.2011.01.023en_US
dc.identifier.urihttp://hdl.handle.net/11536/8850-
dc.description.abstractElectromigration tests were performed for solder joints with various Si dies thickness and area. For the electro-migration in flip-chip solder joints with a 60, 100.250 and 760 mu m thick Si die, it is found that Si-die thickness has profound influence on electro-migration lifetime. The average failure time was 1608.0 h for joints with a 760-mu m-thick die when they are stressed by 1.0 A at 100 degrees C. However, it decreased significantly to 0.6 h for joints with a 60-mu m-thick die. According to the temperature measured by infrared microscopy, solder joints with a thinner die has a higher Joule heating effect, which results in a shorter electromigration lifetime. In addition, the die area has a considerable influence on the electromigration failure time. The electromigration failure time decreases as the die area decreases. The average failure time is 1608.0,28.0, 10.6,5.0 and 0.3 h for the solder joints with die area of 5350 x 4350 mu m(2), 5350 x 3600 mu m(2), 5350 x 3000 mu m(2), 5350 x 2000 mu m(2) and 5350 x 1000 mu m(2), respectively. The Joule heating effect becomes more serious in smaller dies, which causes a shorter electromigration lifetime. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectThermal conductivityen_US
dc.subjectDiffusionen_US
dc.subjectElectrical propertiesen_US
dc.subjectThermal propertiesen_US
dc.titleEffect of Si-die dimensions on electromigration failure time of flip-chip solder jointsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matchemphys.2011.01.023en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume127en_US
dc.citation.issue1-2en_US
dc.citation.spage85en_US
dc.citation.epage90en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000289322800016-
dc.citation.woscount1-
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