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dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorShieh, Jiannen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:11:33Z-
dc.date.available2014-12-08T15:11:33Z-
dc.date.issued2011-05-12en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp201973yen_US
dc.identifier.urihttp://hdl.handle.net/11536/8864-
dc.description.abstractWe report a lithography-free approach for fabricating silicon nanopillars (Si-NPs) and biomimetics porous silicon (P-Si) with excellent antireflective properties. The self-assembled silver nanostructures (nanoislands and disordered nanogrids) were formed via the Volmer-Weber (island growth) mode during the deposition process, which, in turn, serve as a metal-nanomask for the subsequent dry etching process carried out for fabricating the Si-NPs and P-Si on Si substrates. Reflectivity of about 0.65% was obtained over the spectral region ranging from deep-ultraviolet to infrared light (300-1000 nm). The remarkable antireflective characteristics obtained are attributed to the drastic decrease of effective index of refraction and the enhanced matching effect between air and substrate resulting from the Si nanostructures and suggesting an interesting alternative route for producing nanostructures that might be useful for photovoltaic applications.en_US
dc.language.isoen_USen_US
dc.titleSubwavelength Antireflective Si Nanostructures Fabricated by Using the Self-Assembled Silver Metal-Nanomasken_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp201973yen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume115en_US
dc.citation.issue18en_US
dc.citation.spage8983en_US
dc.citation.epage8987en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000290127200018-
dc.citation.woscount12-
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