完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYang, Tsung-Yuen_US
dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:11:34Z-
dc.date.available2014-12-08T15:11:34Z-
dc.date.issued2007en_US
dc.identifier.isbn978-7-5617-5228-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/8867-
dc.description.abstractIn this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFrs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and I-off can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-k gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.en_US
dc.language.isoen_USen_US
dc.subjecthigh-k gate dielectricen_US
dc.subjectHfO2en_US
dc.subjectnitric acid oxidationen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleImpacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-k gate dielectricen_US
dc.typeProceedings Paperen_US
dc.identifier.journalAD'07: Proceedings of Asia Display 2007, Vols 1 and 2en_US
dc.citation.spage519en_US
dc.citation.epage522en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000248022600129-
顯示於類別:會議論文