| 標題: | 奈米CMOS模型研發以探討應力工程與佈局效應對於高頻特性與寬頻雜訊之影響(III) Nanoscale CMOS Modeling for Strain Engineering and Layout Dependent Effects on High Frequency Performance and Broadband Noise (III) |
| 作者: | 郭治群 Guo Jyh-Chyurn 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2014 |
| 官方說明文件#: | MOST103-2221-E009-184 |
| URI: | http://hdl.handle.net/11536/88839 https://www.grb.gov.tw/search/planDetail?id=8349844&docId=444927 |
| Appears in Collections: | Research Plans |
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