| 標題: | 深層能階的載子補捉對於光學引發砷化銦量子點內電荷儲存之影響 Effects of Dynamic Trapping and Detrapping of Deep Levels on the Optically Induced Charge Storage in Inas Quantum Dots (Qds) |
| 作者: | 陳振芳 CHEN JENN-FANG 國立交通大學電子物理學系（所） |
| 公開日期: | 2014 |
| 官方說明文件#: | MOST103-2112-M009-006 |
| URI: | http://hdl.handle.net/11536/88871 https://www.grb.gov.tw/search/planDetail?id=8359218&docId=448014 |
| 顯示於類別： | 研究計畫 |
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- Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots / Liao, Yu-An;Chao, Yi-Kai;Chang, Shu-Wei;Chang, Wen-Hao;Chyi, Jen-Inn
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