深層能階的載子補捉對於光學引發砷化銦量子點內電荷儲存之影響

Title:	深層能階的載子補捉對於光學引發砷化銦量子點內電荷儲存之影響 Effects of Dynamic Trapping and Detrapping of Deep Levels on the Optically Induced Charge Storage in Inas Quantum Dots (Qds)
Authors:	陳振芳 CHEN JENN-FANG 國立交通大學電子物理學系（所）
Issue Date:	2014
Gov't Doc #:	MOST103-2112-M009-006
URI:	http://hdl.handle.net/11536/88871 https://www.grb.gov.tw/search/planDetail?id=8359218&docId=448014
Appears in Collections:	Research Plans