標題: | Mobility improvement of HfO2 LTPS-TFTs with nitrogen implanataion |
作者: | Ma, Ming-Wen Yang, Tsung-Yu Kao, Kuo-Hsing Su, Chun-Jung Chao, Tien-Sheng Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | high-k gate dielectric;HfO2;nitrogen implantation;thin-film transistors (TFT) |
公開日期: | 2007 |
摘要: | In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFrs) with high-k HfO2 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Various nitrogen does 5 X 10(13) and 5 X 10(14) cm(-2) were implanted after gate dielectric deposition. Significant improvement 94.4% and 74.4% on transconductance G(m) and field effect mobility, respectively, are observed due to the nitrogen implantation. In addition, a substantial gate leakage current reduction over four orders is also obtained to decrease undesirable power dissipation. Finally, a high performance LTPS-TFT with low subthreshold swing 0.177 V/decade and threshold voltage about 1 V can be achieved without any other hydrogen plasma passivation treatments. |
URI: | http://hdl.handle.net/11536/8902 |
ISBN: | 978-7-5617-5228-9 |
期刊: | AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 |
起始頁: | 674 |
結束頁: | 677 |
顯示於類別: | 會議論文 |