標題: Mobility improvement of HfO2 LTPS-TFTs with nitrogen implanataion
作者: Ma, Ming-Wen
Yang, Tsung-Yu
Kao, Kuo-Hsing
Su, Chun-Jung
Chao, Tien-Sheng
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: high-k gate dielectric;HfO2;nitrogen implantation;thin-film transistors (TFT)
公開日期: 2007
摘要: In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFrs) with high-k HfO2 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Various nitrogen does 5 X 10(13) and 5 X 10(14) cm(-2) were implanted after gate dielectric deposition. Significant improvement 94.4% and 74.4% on transconductance G(m) and field effect mobility, respectively, are observed due to the nitrogen implantation. In addition, a substantial gate leakage current reduction over four orders is also obtained to decrease undesirable power dissipation. Finally, a high performance LTPS-TFT with low subthreshold swing 0.177 V/decade and threshold voltage about 1 V can be achieved without any other hydrogen plasma passivation treatments.
URI: http://hdl.handle.net/11536/8902
ISBN: 978-7-5617-5228-9
期刊: AD'07: Proceedings of Asia Display 2007, Vols 1 and 2
起始頁: 674
結束頁: 677
Appears in Collections:Conferences Paper