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dc.contributor.authorYau, Wei-Hungen_US
dc.contributor.authorTseng, Pai-Chungen_US
dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorTsai, Chien-Huangen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.date.accessioned2014-12-08T15:11:39Z-
dc.date.available2014-12-08T15:11:39Z-
dc.date.issued2011-05-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2011.01.005en_US
dc.identifier.urihttp://hdl.handle.net/11536/8939-
dc.description.abstractIn this study, we used cathodoluminescence (CL) spectroscopy to examine the CL emissions of zinc selenide (ZnSe) single crystals that had been subjected to Berkovich nanoindentation. The CL spectra of the ZnSe exhibited both impurity emission peaks (1.8-2.4 eV band) and near-bandgap emission peaks (2.68 eV). Although CL emissions were generated during four unloading/reloading cycles, the decreased intensity of the impurity emission can be explained in terms of extended dislocation nucleation and propagation during nanoindentation. The resultant dislocation and microcracks were visualized using CL mapping and transmission electron microscopy. We suspect that the formation of a hysteresis loop during the four unloading/reloading cycles was due, in part, to massive dislocation activities induced by the indenter. (C) 2011 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleLuminescence properties of mechanically nanoindented ZnSeen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2011.01.005en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume51en_US
dc.citation.issue5en_US
dc.citation.spage931en_US
dc.citation.epage935en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000290245700012-
dc.citation.woscount4-
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