深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II)

Full metadata record

DC Field	Value	Language
dc.contributor.author	陳明哲	en_US
dc.contributor.author	CHEN MING-JER	en_US
dc.date.accessioned	2014-12-13T10:29:40Z	-
dc.date.available	2014-12-13T10:29:40Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-049	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/89508	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=542092&docId=99579	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	穿隧漏電流	zh_TW
dc.subject	快閃式記憶體	zh_TW
dc.subject	深次微米	zh_TW
dc.subject	靜電放電	zh_TW
dc.subject	鎖定	zh_TW
dc.subject	超大型積體電路	zh_TW
dc.subject	Tunneling leakage	en_US
dc.subject	Flash memory	en_US
dc.subject	Deep submicrometer	en_US
dc.subject	ESD	en_US
dc.subject	Latch-up	en_US
dc.subject	VLSI	en_US
dc.title	深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II)	zh_TW
dc.title	Tunneling Leakage, Latch-up, and ESD in Deep Submicron MOSFET's (II)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程研究所	zh_TW
Appears in Collections:	Research Plans

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