Light Enhancement of Silicon-Nanocrystal-Embedded SiO(x) Film on Silicon-on-Insulator Substrate

doi:10.1143/JJAP.50.04DJ09

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Cheng-Chang	en_US
dc.contributor.author	Lin, Yung-Hsaing	en_US
dc.contributor.author	Shih, M. H.	en_US
dc.contributor.author	Lin, Gong-Ru	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.date.accessioned	2014-12-08T15:11:47Z	-
dc.date.available	2014-12-08T15:11:47Z	-
dc.date.issued	2011-04-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.50.04DJ09	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9036	-
dc.description.abstract	We reported the light enhancement from a silicon-nanocrystal-embedded SiO(x) film on a silicon-on-insulator (SOI) substrate in the visible light range. The light emission from the annealed SiO(x) film is one order stronger than the emission from a nonannealed SiO(x) film. Compared with the SiO(x) film on a Si substrate, two-fold enhancement in light emission from the SiO(x) film on a SOI substrate was also observed. The enhancement was attributed to better vertical confinement of optical field in the SiO(x) film on a SOI substrate. (C) 2011 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Light Enhancement of Silicon-Nanocrystal-Embedded SiO(x) Film on Silicon-on-Insulator Substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.50.04DJ09	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	50	en_US
dc.citation.issue	4	en_US
dc.citation.spage		en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
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