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dc.contributor.authorChen, Cheng-Changen_US
dc.contributor.authorLin, Yung-Hsaingen_US
dc.contributor.authorShih, M. H.en_US
dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:11:47Z-
dc.date.available2014-12-08T15:11:47Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.04DJ09en_US
dc.identifier.urihttp://hdl.handle.net/11536/9036-
dc.description.abstractWe reported the light enhancement from a silicon-nanocrystal-embedded SiO(x) film on a silicon-on-insulator (SOI) substrate in the visible light range. The light emission from the annealed SiO(x) film is one order stronger than the emission from a nonannealed SiO(x) film. Compared with the SiO(x) film on a Si substrate, two-fold enhancement in light emission from the SiO(x) film on a SOI substrate was also observed. The enhancement was attributed to better vertical confinement of optical field in the SiO(x) film on a SOI substrate. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleLight Enhancement of Silicon-Nanocrystal-Embedded SiO(x) Film on Silicon-on-Insulator Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.04DJ09en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue4en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
Appears in Collections:Articles


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