完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Lee, Kuo-Fu | en_US |
dc.contributor.author | Yiu, Chun-Yen | en_US |
dc.contributor.author | Chiu, Yung-Yueh | en_US |
dc.contributor.author | Chang, Ru-Wei | en_US |
dc.date.accessioned | 2014-12-08T15:11:48Z | - |
dc.date.available | 2014-12-08T15:11:48Z | - |
dc.date.issued | 2011-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.50.04DC07 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9042 | - |
dc.description.abstract | In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation. (C) 2011 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.50.04DC07 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 50 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 傳播研究所 | zh_TW |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Institute of Communication Studies | en_US |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000289722400028 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |