标题: Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing
作者: Chen, W. B.
Shie, B. S.
Chin, Albert
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Annealing;gate dielectric;Ge;high-kappa;laser
公开日期: 1-四月-2011
摘要: By applying laser annealing (LA) on both gate dielectrics and source/drain activation, the TaN/ZrO(2)/La(2)O(3)/SiO(2) on Ge n-MOSFETs shows a high gate capacitance density, a small n(+)/p-junction ideality factor of 1.10, a small subthreshold swing (SS) of 106 mV/dec, and a good high-field mobility of 285 or 340 cm(2)/V . s after gate leakage correction at 1 MV/cm, at a small 0.95-nm equivalent oxide thickness (EOT). To the best of our knowledge, this is the first demonstration of significantly high gate capacitance in MOSFETs by LA. This is also the highest 1-MV/cm mobility at the smallest EOT of Ge n-MOSFETs and better than the SiO(2)/Si universal mobility.
URI: http://dx.doi.org/10.1109/LED.2011.2106478
http://hdl.handle.net/11536/9072
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2106478
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 4
起始页: 449
结束页: 451
显示于类别:Articles


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