標題: Zinc Oxide Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method
作者: Cheng, Huang-Chung
Yang, Po-Yu
Wang, Jyh-Liang
Agarwal, Sanjay
Tsai, Wei-Chih
Wang, Shui-Jinn
Lee, I-Che
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hydrothermal method;lateral grain growth;thin-film transistor (TFT);zinc oxide (ZnO)
公開日期: 1-Apr-2011
摘要: High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85 degrees C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 mu m/10 mu m) demonstrated the high field-effect mobility of 9.07 cm(2)/V . s, low threshold voltage of 2.25 V, high on/off-current ratio above 10(6), superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.
URI: http://dx.doi.org/10.1109/LED.2010.2103921
http://hdl.handle.net/11536/9074
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2103921
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 4
起始頁: 497
結束頁: 499
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