標題: | Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiO(X)/TiN Structure |
作者: | Syu, Yong-En Chang, Ting-Chang Tsai, Tsung-Ming Hung, Ya-Chi Chang, Kuan-Chang Tsai, Ming-Jinn Kao, Ming-Jer Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-四月-2011 |
摘要: | This letter investigates the resistive random access memory device characteristics and the physical mechanism of a device with a TiN/CoSiO(X)/Pt structure. In general, the mechanism is regarded as a redox reaction in the dielectric interface between the Ti electrode and the conductive filament. Furthermore, the switching voltage is correlated only with redox reaction potential. A designed circuit is used to accurately observe the resistance switching process with a pulse generator and an oscilloscope, which reveals that the switching process is related to both time and voltage. The constant switching energy demonstrates that the switching mechanism is the redox reaction. |
URI: | http://dx.doi.org/10.1109/LED.2011.2104936 http://hdl.handle.net/11536/9077 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2104936 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 32 |
Issue: | 4 |
起始頁: | 545 |
結束頁: | 547 |
顯示於類別: | 期刊論文 |