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dc.contributor.authorHsieh, Chun-Yuen_US
dc.contributor.authorHuang, Hong-Weien_US
dc.contributor.authorChen, Ke-Horngen_US
dc.date.accessioned2014-12-08T15:11:51Z-
dc.date.available2014-12-08T15:11:51Z-
dc.date.issued2011-04-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2009.2038061en_US
dc.identifier.urihttp://hdl.handle.net/11536/9089-
dc.description.abstractAn ultra low-power, precise voltage reference using a switched-capacitor technique in 0.35-mu m CMOS is presented in this paper. The temperature dependence of the carrier mobility and channel length modulation effect can be effectively minimized by using 3.3 and 5V N-type transistors to operate in the saturation and subthreshold regions, respectively. In place of resistors, a precise reference voltage with flexible trimming capability is achieved by using capacitors. When the supply voltage is 1 V and the temperature is 80 degrees C, the supply current is 250 nA. The line sensitivity is 0.76%/V; the PSRR is -41 dB at 100 Hz and -17 dB at 10 MHz. Moreover, the occupied die area is 0.049 mm(2).en_US
dc.language.isoen_USen_US
dc.subjectCMOS voltage referenceen_US
dc.subjectnanocurrenten_US
dc.subjectswitched-capacitoren_US
dc.titleA 1-V, 16.9 ppm/degrees C, 250 nA Switched-Capacitor CMOS Voltage Referenceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TVLSI.2009.2038061en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume19en_US
dc.citation.issue4en_US
dc.citation.spage659en_US
dc.citation.epage667en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000288681400013-
dc.citation.woscount4-
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