製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究(III)

標題:	製備合成氧化物在互補式金氧半閘極介電層及自旋電元件應用之研究(III) Deposition and Characterization of Compound Oxide Films for High-K CMOS Gate Dielectrics and Spintronic Applications(III)
作者:	趙天生 TIEN-SHENGCHAO 交通大學電子物理系
公開日期:	2004
官方說明文件#:	NSC93-2215-E009-037
URI:	http://hdl.handle.net/11536/90907 https://www.grb.gov.tw/search/planDetail?id=1026707&docId=195185
Appears in Collections:	Research Plans

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