奈米MOS元件之矽化物、超淺接面及接觸孔之研發(III)

Full metadata record

DC Field	Value	Language
dc.contributor.author	雷添福	en_US
dc.contributor.author	LEI TAN-FU	en_US
dc.date.accessioned	2014-12-13T10:31:24Z	-
dc.date.available	2014-12-13T10:31:24Z	-
dc.date.issued	2004	en_US
dc.identifier.govdoc	NSC93-2215-E009-003	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/90911	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1026607&docId=195154	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	奈米MOS元件之矽化物、超淺接面及接觸孔之研發(III)	zh_TW
dc.title	Development of Silicide, Ultra-Shallow Junction and Contact Hole in Nano MOS Devices(III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程研究所	zh_TW
Appears in Collections:	Research Plans

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