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dc.contributor.author黃調元en_US
dc.contributor.authorTIAO-YUANHUANGen_US
dc.date.accessioned2014-12-13T10:31:30Z-
dc.date.available2014-12-13T10:31:30Z-
dc.date.issued2004en_US
dc.identifier.govdocNSC93-2215-E009-033zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/90988-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1026694&docId=195181en_US
dc.description.abstract本計畫將製作具有形變矽、形變矽鍺表面通道之金氧半場效電晶體於矽鍺虛擬基板 上。伸張形變矽可提高電子與電洞移動率,壓縮形變矽鍺可提高電洞移動率,本實驗將 探討載子於不同晶向(100)、(110)與通道方向上<100>、<110>行進,形變對載子移動率 的作用;此外,當形變通道厚度縮減後所遇到的鍺層間擴散、額外的合金散射、界面密 度的增加等因素亦探討之;最後,高溫引致的形變釋放、矽鍺金屬矽化反應、矽鍺內摻 質擴散率的改變、電性上的自動加熱效應、負偏壓溫度不穩定性等等製程與分析問題與 載子移動率的關係,亦涵蓋在計畫的研究內。zh_TW
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject形變矽zh_TW
dc.subject形變矽鍺zh_TW
dc.subject矽鍺虛擬基板zh_TW
dc.subject合金散射zh_TW
dc.subject負偏壓溫度不穩定性zh_TW
dc.title具有形變通道之互補式金氧半元件製作與分析zh_TW
dc.titleFabrication and Characterization of CMOS Devices with Strained Channelen_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
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