標題: 光資訊關鍵性材料製程與性質研究---子計畫五:用晶圓接合與溼式蝕刻方式來剝離側向覆蓋生長之氮化鎵磊晶層(III)
Lift off GaN Epitaxy Lateral Overgrowth Layer by Wafer Bonding and Wet Etching Methods(III)
作者: 吳耀銓
YEWCHUNG SERMONWU
交通大學材料科學與工程系
公開日期: 2004
官方說明文件#: NSC93-2216-E009-010
URI: http://hdl.handle.net/11536/91165
https://www.grb.gov.tw/search/planDetail?id=1028092&docId=195608
Appears in Collections:Research Plans


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