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dc.contributor.authorChang, Chia-Wenen_US
dc.contributor.authorChang, Che-Lunen_US
dc.contributor.authorLee, Jam-Wemen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:11:54Z-
dc.date.available2014-12-08T15:11:54Z-
dc.date.issued2007en_US
dc.identifier.isbn978-957-28522-4-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/9124-
dc.description.abstractHigh-performance polycrystalline-silicon thin-film transistors (poly-Si TFTs) with floating channel solid-phase crystallization are proposed for the first time. By adopting this novel crystallization scheme, a better crystalline poly-Si film can be obtained in the suspended channel film. Poly-Si TFTs with this novel floating channel structure have been successfully fabricated and the experimental results demonstrate a superior electrical performance and reliability.en_US
dc.language.isoen_USen_US
dc.titleImprovement of electrical characteristics for novel process-compatible floating channel solid-phase crystallized poly-Si TFTsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007en_US
dc.citation.spage138en_US
dc.citation.epage140en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000258177700034-
Appears in Collections:Conferences Paper