完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 曾俊元 | en_US |
dc.contributor.author | TSEUNG-YUENTSENG | en_US |
dc.date.accessioned | 2014-12-13T10:32:13Z | - |
dc.date.available | 2014-12-13T10:32:13Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.govdoc | NSC93-2215-E009-048 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/91423 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1026744&docId=195196 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 高介電常數鈦酸鍶基閘極氧化物及元件的製作、結構與特性研究(I) | zh_TW |
dc.title | Investigations of High-k SrTiO3-Base Gate Dielectrics and Devices Fabrication and Their Structures and Properties(I) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 交通大學電子工程系 | zh_TW |
顯示於類別: | 研究計畫 |