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dc.contributor.author曲新生en_US
dc.contributor.authorCHU, HSIN-SENen_US
dc.date.accessioned2014-12-13T10:32:28Z-
dc.date.available2014-12-13T10:32:28Z-
dc.date.issued2000en_US
dc.identifier.govdocNSC89-2212-E009-039zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/91574-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=501218&docId=90364en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subjectBST介電薄膜zh_TW
dc.subject熱物理性質zh_TW
dc.subject快速熱回火製程zh_TW
dc.subject熱應力zh_TW
dc.subjectBST dielectric thin filmen_US
dc.subjectThermal physical propertyen_US
dc.subjectRapid thermal processing (RTP)en_US
dc.subjectThermal stressen_US
dc.title12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫II:BST介電薄膜在12吋矽晶圓上快速熱回火製程中熱物理性質及熱應力之研究(I)zh_TW
dc.titleStudy on the Thermal Properties and Stresses of a 12-Inch Silicon Wafer with High-Dielectric BST Thin Films in Rapid Thermal Processing/Annealing (I)en_US
dc.typePlanen_US
dc.contributor.department交通大學機械工程系zh_TW
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