Study on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress

Title:	Study on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress
Authors:	Lu, Hau-Yan Chung, Wan-Fang Tseng, Tzu-Yi Chen, Yu-Cheng Liu, Po-Tsun Chang, Ting-Chang Chi, Sien 光電工程學系 Department of Photonics
Issue Date:	2007
Abstract:	The influence of protrusion grain boundary on the degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress is investigated. The degradation of TFT with protrusion grain boundary is more severe and the different damage of the source/drain junction in the TFT with grain boundary closed to source side.
URI:	http://hdl.handle.net/11536/9212
ISBN:	978-957-28522-4-8
Journal:	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007
Begin Page:	503
End Page:	504
Appears in Collections:	Conferences Paper