Field Dependence of Porous Low-k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions

doi:10.1109/TDMR.2010.2103316

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DC Field	Value	Language
dc.contributor.author	Lee, S. C.	en_US
dc.contributor.author	Oates, A. S.	en_US
dc.contributor.author	Chang, K. M.	en_US
dc.date.accessioned	2014-12-08T15:12:02Z	-
dc.date.available	2014-12-08T15:12:02Z	-
dc.date.issued	2011-03-01	en_US
dc.identifier.issn	1530-4388	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TDMR.2010.2103316	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9216	-
dc.description.abstract	We investigate the electric field (E) dependence of the breakdown of porous low-k dielectrics by measuring the changes in the failure time distribution resulting from the presence of line edge roughness. We show that the Weibull beta increases with decreasing field, clearly demonstrating that dielectric breakdown does not exhibit 1/E or E(-n) characteristics.	en_US
dc.language.iso	en_US	en_US
dc.subject	Cu/low-k interconnect reliability	en_US
dc.subject	line edge roughness (LER)	en_US
dc.subject	time-dependent dielectric breakdown (TDDB)	en_US
dc.title	Field Dependence of Porous Low-k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions	en_US
dc.type	Letter	en_US
dc.identifier.doi	10.1109/TDMR.2010.2103316	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY	en_US
dc.citation.volume	11	en_US
dc.citation.issue	1	en_US
dc.citation.spage	201	en_US
dc.citation.epage	203	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000288454700029	-
dc.citation.woscount	0	-
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