標題: Field Dependence of Porous Low-k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions
作者: Lee, S. C.
Oates, A. S.
Chang, K. M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Cu/low-k interconnect reliability;line edge roughness (LER);time-dependent dielectric breakdown (TDDB)
公開日期: 1-Mar-2011
摘要: We investigate the electric field (E) dependence of the breakdown of porous low-k dielectrics by measuring the changes in the failure time distribution resulting from the presence of line edge roughness. We show that the Weibull beta increases with decreasing field, clearly demonstrating that dielectric breakdown does not exhibit 1/E or E(-n) characteristics.
URI: http://dx.doi.org/10.1109/TDMR.2010.2103316
http://hdl.handle.net/11536/9216
ISSN: 1530-4388
DOI: 10.1109/TDMR.2010.2103316
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 11
Issue: 1
起始頁: 201
結束頁: 203
Appears in Collections:Articles


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